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PD - 97519
IRLML9303TRPBF
VDS VGS Max RDS(on) max
(@VGS = -10V)
-30 20 165 270
V V m m
6 *
HEXFET(R) Power MOSFET
'
RDS(on) max
(@VGS = -4.5V)
Micro3TM (SOT-23) IRLML9303TRPBF
Application(s)
* System/Load Switch
Features and Benefits
Features
Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Consumer qualification
Benefits
Multi-vendor compatibility results in Easier manufacturing Environmentally friendly Increased reliability
Absolute Maximum Ratings
Symbol
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG
Parameter
Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-30 -2.3 -1.8 -12 1.25 0.80 0.01 20 -55 to + 150
Units
V A
W W/C V C
Thermal Resistance
Symbol
RJA RJA Junction-to-Ambient e
Parameter
Typ.
--- ---
Max.
100 99
Units
C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
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Notes through are on page 10
1
05/27/2010
IRLML9303TRPBF
Electric Characteristics @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-30 --- --- --- -1.3 --- --- --- --- --- 2.3 --- --- --- --- --- --- --- --- --- --- --- -3.7 135 220 --- --- --- --- --- 21 --- 2.0 0.57 1.2 7.5 14 9.0 8.6 160 39 25 --- --- 165 270 -2.4 1.0 150 -100 100 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC V
Conditions
VGS = 0V, ID = -250A VGS = -10V, ID = -2.3A VGS = -4.5V, ID VDS = VGS, ID = -10A VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VDS = -10V, ID =-2.3A ID = -2.3A VDS =-15V VGS = -4.5V ID = -1.0A RG = 6.8 VGS = -4.5V VGS = 0V VDS = -25V = 1.0KHz
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) IDSS IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
mV/C Reference to 25C, ID = -1mA m V A nA S
d = -1.8A d
d
VDD =-15Vd
Source - Drain Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 12 5.3 -1.3 A -12 -1.2 18 8.0 V ns nC
Conditions
MOSFET symbol showing the integral reverse
G S D
p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, VR = -24V, IF=-1.3A di/dt = 100A/s
d
d
2
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IRLML9303TRPBF
100 100
60s PULSE WIDTH
Tj = 25C
-ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
-ID, Drain-to-Source Current (A)
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V
60s PULSE WIDTH Tj = 150C 10
TOP
BOTTOM
VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V
1
1
0.1 -2.5V 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
0.1
-2.5V
0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.6
RDS(on) , Drain-to-Source On Resistance (Normalized)
-I D, Drain-to-Source Current (A)
1.4
ID = -2.3A VGS = -10V
10
1.2
1
T J = 150C T J = 25C VDS = -15V 60s PULSE WIDTH 1 2 3 4 5 6 7
1.0
0.8
0.1
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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3
IRLML9303TRPBF
1000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED
14.0 ID= -2.3A
-V GS, Gate-to-Source Voltage (V)
C rss = C gd
12.0 10.0 8.0 6.0 4.0 2.0 0.0 VDS= -24V VDS= -15V
C oss = C ds + C gd
C, Capacitance (pF)
Ciss 100 Coss Crss
VDS= -6.0V
10 1 10 -VDS, Drain-to-Source Voltage (V) 100
0
1
2
3
4
5
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100sec 1msec 10msec DC 0.1 T A = 25C Tj = 150C Single Pulse 0.01 0.1 1 10 100
10 T J = 150C T J = 25C
-I D, Drain-to-Source Current (A)
1.3
-I SD, Reverse Drain Current (A)
1
1
VGS = 0V 0.1 0.3 0.5 0.7 0.9 1.1 -VSD, Source-to-Drain Voltage (V)
0.01 -VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLML9303TRPBF
2.5
V DS
2.0
-I D, Drain Current (A)
RD
VGS RG
D.U.T.
+
- VDD
1.5
VGS
Pulse Width 1 s Duty Factor 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
0.5
VDS
0.0 25 50 75 100 125 150 T A , Ambient Temperature (C)
90%
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1000
Thermal Response ( Z thJA ) C/W
100
D = 0.50 0.20 0.10 0.05 0.02 0.01
10
1
0.1
SINGLE PULSE ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10
0.01 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLML9303TRPBF
ID = -2.3A 400
RDS(on), Drain-to -Source On Resistance ( m)
RDS(on), Drain-to -Source On Resistance (m )
500
600 500 Vgs = -4.5V 400 300 200 Vgs = -10V 100 0 0 5 10 15 20 -I D, Drain Current (A)
300
200
T J = 125C
100
T J = 25C
0 2 4 6 8 10 12 14 16 18 20
-V GS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
VGS
VG
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRLML9303TRPBF
2.2
-V GS(th) , Gate threshold Voltage (V)
1000
2.0 1.8 ID = -10A 1.6 1.4 1.2 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Single Pulse Power (W)
800
600
400
200
0 1E-7 1E-6 1E-5 1E-4 1E-3 1E-2 1E-1 1E+0 Time (sec)
Fig 15. Typical Threshold Voltage vs. Junction Temperature
Fig 16. Typical Power vs. Time
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7
IRLML9303TRPBF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
6 D
A A2 C
DIMENSIONS
A 5
SYMBOL
MILLIMETERS MIN MAX
INCHES MIN MAX
3 6 E1 1 2
E
0.15 [0.006] M C B A
0.10 [0.004] C
A1
3X b
0.20 [0.008] M C B A
5
B
e e1
NOTES:
H4
L1
Recommended Footprint
c
A A1 A2 b c D E E1 e e1 L L1 L2
0.972
0.950
0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0
1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8
## 0.0004 # "$ # ! ! " ' ! '" # #& $$ "& 7T8 &$ 7T8A % !# ! REF BSC
0 8
"$
L2 3X L 7
0.802
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
1.900
Micro3 (SOT-23/TO-236AB) Part Marking Information
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRLML9303TRPBF
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 )
1.6 ( .062 ) 1.5 ( .060 )
1.85 ( .072 ) 1.65 ( .065 )
1.32 ( .051 ) 1.12 ( .045 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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9
IRLML9303TRPBF
Orderable part number IRLML9303TRPBF
Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Micro3
Cons umer (per JE DE C JE S D47F

Package Type Micro3
Standard Pack Form Quantity Tape and Reel 3000
Note
guidelines ) MS L1
(per IPC/JE DE C J-S T D-020D Yes
)

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board. Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/2010
10
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